Electro-Optical Characterization of an Amorphous Germanium-Tin (Ge1-XSnx) Microbolometer

نویسندگان

چکیده

The utilization of amorphous germanium-tin (Ge1-xSnx) semiconducting thin films as temperature-sensing layers in microbolometers was recently presented and patented. work this paper performed an extension the latest study to acquire better Sn concentrations % for microbolometer applications. In work, Ge1-xSnx with various %, x, where 0.31 ≤ x 0.48, were sputter-deposited. elemental composition each film evaluated using energy-dispersive X-ray (EDX) spectroscopy, surface morphology atomic force microscopy (AFM), showing average roughness values between ~ 0.2 0.8 nm. Measurements sheet resistance versus temperature analyzed, revealing coefficients resistance, TCRs, ranging from –3.11%/K –2.52%/K 0.40 above which found exhibit metallic behavior at < 0.48. Empirical relationships relating resistivity, TCR, concentration derived. One a 31% (Ge0.69Sn0.31) used fabricate 10×10 μm2 prototypes electron-beam lithography lift-off techniques, fabricated on top oxidized silicon substrates no air gap them. noise maximum detected signal measured. signal-to-noise ratio, voltage responsivity, equivalent power calculated. Finally, expected performance proposed air-bridge configuration

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ژورنال

عنوان ژورنال: Journal of Infrared, Millimeter, and Terahertz Waves

سال: 2023

ISSN: ['1866-6906', '1866-6892']

DOI: https://doi.org/10.1007/s10762-023-00909-2